Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate
نویسندگان
چکیده
Abstract The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling supply in logic gates. Here we demonstrate GaAs FET with monolayer graphene gate which was externally controlled by an additional control gate. forms Schottky junction channel, modulating channel conductivity. sets work function gate, controlling barrier height therefore voltage, reduces subthreshold swing down to ~60 mV dec −1 . change large enough turn initially depletion mode FETs into enhancement FETs. This allowed realize gates positive each independently set. presented can also be operated as dual-gate FETs, demonstrated realizing frequency mixers.
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ژورنال
عنوان ژورنال: npj 2D materials and applications
سال: 2022
ISSN: ['2397-7132']
DOI: https://doi.org/10.1038/s41699-022-00302-y